Suwon-si, South Korea

Yongwoo Bae

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electro-Mechanics. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yongwoo Bae. Retrieved from https://idiyas.com/inventor/yongwoo-bae-4hr7y2rq

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Yongwoo Bae: Multilayer Capacitor Innovation

Introduction

Yongwoo Bae is an inventor based in Suwon-si, South Korea, and is associated with Samsung Electro-Mechanics. His patent work addresses the design of dielectric materials for multilayer capacitors.

Latest Patents

Bae is named on 1 patent: “Multilayer Capacitor Having a Dielectric Layer with Core-Shell Structured Dielectric Grains.” The invention describes a capacitor body containing dielectric layers and internal electrodes, together with external electrodes. Its dielectric grains include a major component and a minor component, and at least one grain has a core-shell structure with a core-shell wall between the core and shell. The patent further specifies a relationship between the minor-component concentrations in the grain boundary and core-shell wall, with their stated ratio ranging from 0.40 to 0.75.

Career Highlights

Bae’s listed patent reflects work on controlling the composition and structure of dielectric grains in multilayer capacitors. Such material design is central to the patent’s approach to capacitor construction.

Collaborations

Bae’s listed coworkers include Kimyoung Yun and Chanhee Nam. The patent information provided identifies his association with Samsung Electro-Mechanics.

Conclusion

Yongwoo Bae’s patent focuses on core-shell structured dielectric grains and their composition in multilayer capacitors, highlighting his contribution to capacitor-related innovation at Samsung Electro-Mechanics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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