The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2026

Filed:

May. 14, 2024
Applicant:

Samsung Electro-mechanics Co., Ltd., Suwon-si, KR;

Inventors:

Kimyoung Yun, Suwon-si, KR;

Chanhee Nam, Suwon-si, KR;

Heesun Chun, Suwon-si, KR;

Yongwoo Bae, Suwon-si, KR;

Mingon Lee, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/12 (2006.01); H01G 4/30 (2006.01);
U.S. Cl.
CPC ...
H01G 4/1227 (2013.01); H01G 4/30 (2013.01);
Abstract

A multilayered capacitor according to an embodiment includes a capacitor body that includes a dielectric layer and an internal electrode, and an external electrode that are disposed on the outside of the capacitor body, and the dielectric layer contain a plurality of dielectric grains containing a major component and a minor component, and at least one of the plurality of dielectric grains has a core-shell structure including a core, a shell, and a core-shell wall positioned between the core and the shell, and between at least two dielectric grains of the plurality of dielectric grains, a grain boundary is included, and when the average concentration of the minor component in the grain boundary is denoted by C(at %) and the average concentration of the minor component in the core-shell wall is denoted by C(at %), C/Cis in a range from 0.40 to 0.75.


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