Yongin-si, South Korea

Yong-Wan Jin


 

Average Co-Inventor Count = 5.1

ph-index = 3

Forward Citations = 42(Granted Patents)


Company Filing History:


Years Active: 2009-2011

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8 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Yong-Wan Jin

Introduction

Yong-Wan Jin is a prominent inventor based in Yongin-si, South Korea. He has made significant contributions to the field of nanotechnology and electromechanical devices. With a total of 8 patents to his name, Jin's work has paved the way for advancements in electronic components and memory devices.

Latest Patents

Among his latest patents is the "Nanowire Electromechanical Switching Device, Method of Manufacturing the Same and Electromechanical Memory Device Using the Nanowire Electromechanical Switching Device." This innovative device features a source electrode and a drain electrode on an insulating substrate, with vertically grown nanowires that facilitate a unique switching operation. Another notable patent is the "Field Effect Transistor (FET) Having Nano Tube and Method of Manufacturing the FET." This transistor design incorporates a conductive nano tube gate and a method for its manufacture, enhancing the efficiency and performance of semiconductor devices.

Career Highlights

Yong-Wan Jin has worked with leading companies in the technology sector, including Samsung Electronics and Samsung Mobile Display. His experience in these organizations has allowed him to contribute to cutting-edge research and development in electronic devices.

Collaborations

Throughout his career, Jin has collaborated with notable colleagues such as Byong-Gwon Song and Seung-nam Cha. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Yong-Wan Jin's contributions to the field of nanotechnology and electromechanical devices highlight his role as a leading inventor. His patents reflect a commitment to advancing technology and improving electronic components.

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