The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Apr. 26, 2007
Ho-suk Kang, Yongin-si, KR;
Yong-wan Jin, Yongin-si, KR;
Sun-il Kim, Yongin-si, KR;
Deuk-seok Chung, Yongin-si, KR;
Byong-gwon Song, Yongin-si, KR;
Shang-hyeun Park, Yongin-si, KR;
Ho-Suk Kang, Yongin-si, KR;
Yong-Wan Jin, Yongin-si, KR;
Sun-Il Kim, Yongin-si, KR;
Deuk-Seok Chung, Yongin-si, KR;
Byong-Gwon Song, Yongin-si, KR;
Shang-Hyeun Park, Yongin-si, KR;
Abstract
A method of manufacturing a field emission display includes: sequentially forming a cathode electrode, an insulating layer, and a gate material layer on a substrate; forming a metal sacrificial layer on an upper surface of the gate material layer; forming a through hole to expose the insulating layer in the metal sacrificial layer and the gate material layer; forming an emitter hole to expose the cathode electrode in the insulating layer exposed through the through hole; forming a gate electrode by etching the gate material layer constituting an upper wall of the emitter hole; and forming an emitter of Carbon NanoTubes (CNTs) on an upper surface of the cathode electrode located below the through hole.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile