Pohang, South Korea

Yong Bum Kwon

This inventor holds 1 USPTO granted patent and 3 published patent applications. Top assignee: Pohang University of Science and Technology Foundation. Active years: 2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yong Bum Kwon. Retrieved from https://idiyas.com/inventor/yong-bum-kwon-1zknrqmp

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2013

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1 patent (USPTO):Explore Patents

Title: Yong Bum Kwon: Innovator in Wettability Modification

Introduction

Yong Bum Kwon is a notable inventor based in Pohang, South Korea. He has made significant contributions to the field of material science, particularly in the area of wettability modification.

Latest Patents

Kwon holds a patent for a method titled "X-ray induced wettability modification." This innovative method involves preparing an inorganic material with a surface and charging that surface with positive surface charges obtained from photoelectron-emission through X-ray irradiation. This technique has the potential to enhance the functionality of various inorganic materials.

Career Highlights

Yong Bum Kwon is affiliated with the Postech Academy-Industry Foundation, where he continues to advance his research and development efforts. His work focuses on improving the properties of materials through innovative techniques.

Collaborations

Kwon has collaborated with esteemed colleagues, including Byung Mook Weon and Kyu Hwang Won, to further explore the applications of his patented technology.

Conclusion

Yong Bum Kwon's contributions to the field of wettability modification exemplify the impact of innovative research in material science. His work not only enhances our understanding of surface properties but also opens new avenues for practical applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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