Tokyo, Japan

Yohitsumu Ikeda


Average Co-Inventor Count = 11.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 1982

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1 patent (USPTO):Explore Patents

Title: The Innovations of Yohitsumu Ikeda

Introduction

Yohitsumu Ikeda is a notable inventor based in Tokyo, Japan. He has made significant contributions to the field of photoconductive materials, particularly with his innovative patent that addresses the challenges associated with photoconductive targets.

Latest Patents

Ikeda holds a patent for a photoconductive target that features an electrode and a P-type conductive layer primarily composed of selenium. This invention makes rectifying contact at the interface with the electrode, with tellurium doped in a portion of the P-type conductive layer. Additionally, at least one metal fluoride is incorporated to form shallow levels, which is doped in the region where the signal current is predominantly generated. This innovative design significantly reduces the high light sticking of the photoconductive target.

Career Highlights

Throughout his career, Ikeda has worked with prominent companies such as Nippon Hoso Kyokai and Hitachi, Ltd. His experience in these organizations has contributed to his expertise in the field of photoconductive technology.

Collaborations

Ikeda has collaborated with notable colleagues, including Keiichi Shidara and Naohiro Goto. Their combined efforts have further advanced the research and development of photoconductive materials.

Conclusion

Yohitsumu Ikeda's contributions to the field of photoconductive technology through his innovative patent and collaborations highlight his importance as an inventor. His work continues to influence advancements in this area.

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