The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 1982
Filed:
May. 22, 1980
Keiichi Shidara, Tama, JP;
Naohiro Goto, Machida, JP;
Tatsuro Kawamura, Tama, JP;
Eikyu Hiruma, Komae, JP;
Yohitsumu Ikeda, Tokyo, JP;
Kenkichi Tanioka, Tokyo, JP;
Tadaaki Hirai, Koganei, JP;
Yukio Takasaki, Hachioji, JP;
Chushirou Kusano, Hachioji, JP;
Tsuyoshi Uda, Hachioji, JP;
Yasuhiko Nonaka, Mobara, JP;
Nippon Hoso Kyokai, Tokyo, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A photoconductive target having an electrode and a P-type conductive layer mainly made of Se and making rectifying contact at an interface with the electrode, with at least Te being doped in a portion of the P-type conductive layer. At least one metal fluoride forming shallow levels is doped in the region where the signal current is generated for the most part of the P-type conductive layer with an average concentration of not less than 50 ppm and not more than 5% by weight. The metal fluoride is preferably at least one selected from the group consisting of LiF, NaF, MgF.sub.2, CaF.sub.2, BaF.sub.2, AlF.sub.3, CrF.sub.3, MnF.sub.2, CoF.sub.2, PbF.sub.2, CeF.sub.3 and TlF. The high light sticking of the photoconductive target can thus be considerably reduced.