Hitachi, Ltd.

Nippon Hoso' Kyokai

Yohitsumu Ikeda

Tadaaki Hirai

Yukio Takasaki

Keiichi Shidara

Yasuhiko Nonaka

Kenkichi Tanioka

Naohiro Goto

Chushirou Kusano

Tatsuro Kawamura

Tsuyoshi Uda

Eikyu Hiruma

A photoconductive target having an electrode and a P-type conductive layer mainly made of Se and making rectifying contact at an interface with the electrode, with at least Te being doped in a portion of the P-type conductive layer. At least one metal fluoride forming shallow levels is doped in the region where the signal current is generated for the most part of the P-type conductive layer with an average concentration of not less than 50 ppm and not more than 5% by weight. The metal fluoride is preferably at least one selected from the group consisting of LiF, NaF, MgF.sub.2, CaF.sub.2, BaF.sub.2, AlF.sub.3, CrF.sub.3, MnF.sub.2, CoF.sub.2, PbF.sub.2, CeF.sub.3 and TlF. The high light sticking of the photoconductive target can thus be considerably reduced.

Photoconductive target

Growing community of inventors

Tokyo, Japan

Yohitsumu Ikeda