Yohei Iwahashi

Title: Innovations by Yohei Iwahashi in Silicon Carbide Technology

Introduction

Yohei Iwahashi is a notable inventor based in Tsukuba, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of silicon carbide devices. His innovative work has led to advancements that enhance the performance and reliability of semiconductor applications.

Latest Patents

Iwahashi holds a patent for a silicon carbide semiconductor device and the method of manufacturing it. The patent describes a process where a silicon nitride film, with a thickness ranging from 1 nm to 3 nm, is deposited on the front surface of a silicon carbide semiconductor base using an Atomic Layer Deposition (ALD) method. Following this, a silicon oxide film, with a thickness between 20 nm and 100 nm, is deposited on the silicon nitride film. The process includes heat treatment at temperatures between 1100 degrees Celsius and 1350 degrees Celsius in an oxygen-rich atmosphere. This treatment increases the nitrogen surface density at the interface of the silicon carbide semiconductor base and the silicon oxide film, thereby reducing the interface state density.

Career Highlights

Iwahashi is associated with Fuji Electric Co., Ltd., where he continues to work on innovative semiconductor technologies. His expertise in silicon carbide devices has positioned him as a key figure in the advancement of this technology.

Collaborations

Iwahashi has collaborated with notable colleagues such as Tsuyoshi Araoka and Mitsuo Okamoto. Their combined efforts contribute to the ongoing research and development in semiconductor technology.

Conclusion

Yohei Iwahashi's contributions to silicon carbide semiconductor technology exemplify the importance of innovation in the field. His patent and ongoing work at Fuji Electric Co., Ltd. highlight his role in advancing semiconductor applications.