Woburn, MA, United States of America

Yoginder Anand

This inventor holds 1 USPTO granted patent. Top assignee: Microwave Associates, Inc.. Active years: 1976.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoginder Anand. Retrieved from https://idiyas.com/inventor/yoginder-anand-x6pw7597

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 1.0

ph-index = 1

Forward Citations = 26(Granted Patents)


Company Filing History:


Years Active: 1976

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1 patent (USPTO):Explore Patents

Title: The Innovations of Yoginder Anand

Introduction

Yoginder Anand is a notable inventor based in Woburn, MA (US). He has made significant contributions to the field of microwave technology. His work primarily focuses on the development of advanced semiconductor devices.

Latest Patents

Yoginder Anand holds a patent for his invention of zero-bias Schottky barrier detector diodes. These metal-silicide-silicon Schottky barrier diodes are designed through a process that achieves a low barrier height of approximately 0.15 volts. This characteristic makes them suitable for use without direct current bias as detectors at microwave frequencies. The use of low barrier height metals, such as palladium, platinum, and hafnium, processed through heat treatment steps, allows for a reduction in barrier height below that typical of point contact diodes.

Career Highlights

Yoginder Anand is associated with Microwave Associates, Inc., where he applies his expertise in microwave technology. His innovative approach has led to advancements in the performance and efficiency of microwave devices.

Collaborations

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Conclusion

Yoginder Anand's contributions to the field of microwave technology, particularly through his patented innovations, highlight his role as a significant inventor. His work continues to influence advancements in semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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