The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 1976
Filed:
Jan. 25, 1974
Applicant:
Inventor:
Yoginder Anand, Woburn, MA (US);
Assignee:
Microwave Associates, Inc., Burlington, MA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
427 84 ; 427 88 ; 427124 ; 357 15 ; 357 67 ;
Abstract
Metal-silicide-silicon Schottky barrier diodes are made by a process which yields the characteristic of low barrier height, in the region of 0.15 volt, suitable for use without dc bias as a detector at microwave frequencies. Low barrier height metals, such as palladium, platinum and hafnium are processed through heat treatment steps which reduce the barrier height below that which is typical of point contact diodes.
Anand, Yoginder. (1976). Zero-bias schottky barrier detector diodes (U.S. Patent No. 3968272). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/3968272
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile