Company Filing History:
Years Active: 2016-2019
Title: Yiwei Song: Innovator in Memory Device Technology
Introduction
Yiwei Song is a prominent inventor based in Union City, California, known for his significant contributions to memory device technology. With a total of five patents to his name, he has made notable advancements in the field of non-volatile memory systems.
Latest Patents
One of Yiwei Song's latest patents is titled "Variable-term error metrics adjustment." This invention involves systems, methods, and devices that adjust error metrics for a memory portion of non-volatile memory in a storage device. The process includes performing a first write and a first read on the memory portion, determining a first error metric value, and adding an entry to a table if the error metric exceeds a threshold. The second write utilizes an error adjustment characteristic based on the first error metric value if the entry is present in the table.
Another significant patent is the "System and method for utilizing history information in a memory device." This invention focuses on controlling blocks in a memory device using a health indicator, such as the failed bit count. To address the noise in the health indicator, a rolling average is determined and compared to the current health indicator. This comparison helps identify outliers and predict future health indicators for different blocks, allowing for more efficient block usage.
Career Highlights
Yiwei Song is currently employed at Sandisk Technologies Inc., where he continues to innovate and develop advanced memory solutions. His work has had a substantial impact on the efficiency and reliability of memory devices.
Collaborations
Some of Yiwei Song's notable coworkers include Xinde Hu and Nian Niles Yang, with whom he collaborates on various projects within the company.
Conclusion
Yiwei Song's contributions to memory device technology through his innovative patents demonstrate his expertise and commitment to advancing the field. His work at Sandisk Technologies Inc. continues to influence the development of more efficient memory systems.
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