The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 25, 2017

Filed:

Sep. 21, 2015
Applicant:

Sandisk Technologies Inc., Plano, TX (US);

Inventors:

Nian Niles Yang, Mountain View, CA (US);

Jim Fitzpatrick, Sudbury, MA (US);

Yiwei Song, Union City, CA (US);

Assignee:

SanDisk Technologies LLC, Plano, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/26 (2006.01); G11C 16/04 (2006.01); G11C 16/14 (2006.01);
U.S. Cl.
CPC ...
G11C 16/34 (2013.01); G11C 16/0483 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01);
Abstract

A non-volatile memory system includes a plurality of groups of connected non-volatile memory cells (e.g., charge trapping memory cells), a select line, and a plurality of select gates connected to the select line. Each select gate is connected at an end (e.g. source end or drain side) of one of the groups of memory cells. The system includes one or more control circuits that are configured to determine whether the select gates are abnormal. If a select gate is determined to be abnormal, then one of the memory cells connected to the select gate is converted to operate as a select gate. The system will then perform memory operations by operating the converted memory cell as a select gate.


Find Patent Forward Citations

Loading…