Shanghai, China

Yiqin Huang

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Sandisk Technologies Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yiqin Huang. Retrieved from https://idiyas.com/inventor/yiqin-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Yiqin Huang: Innovator in Laser Cutting Technology

Introduction

Yiqin Huang is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of laser cutting technology. His innovative approach addresses challenges associated with material re-deposition during the cutting process.

Latest Patents

Yiqin Huang holds 1 patent for his invention titled "Laser cutting with electron removal." This patent describes a laser cutting process designed to prevent undesired re-deposition of material onto the substrate. The process involves biasing at least one electrode to draw electrons from the plasma plume away from the substrate. Additionally, a vacuum port and/or blower is strategically placed to ensure gas flow away from the substrate, further directing electrons away. This innovative method significantly reduces the likelihood of material re-deposition.

Career Highlights

Yiqin Huang is currently employed at Sandisk Technologies Inc., where he continues to develop and refine his cutting-edge technologies. His work has garnered attention for its practical applications in various industries.

Collaborations

Yiqin collaborates with talented coworkers, including Cong Zhang and Hope Chiu. Their combined expertise contributes to the advancement of technology within their field.

Conclusion

Yiqin Huang's contributions to laser cutting technology exemplify the spirit of innovation. His patented process not only enhances efficiency but also addresses critical challenges in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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