This inventor holds 1 USPTO granted patent. Top assignee: Beijing Orient Institute of Measurement and Test. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Yiping Zeng and Low-Magnetic-Field Quantum Hall Resistance Technology.
Introduction
Yiping Zeng is an inventor based in Beijing, China. His work includes a patent for a gallium arsenide sample designed to reproduce the Quantum Hall Resistance effect under lower magnetic-field conditions.
Latest Patents
Zeng is associated with 1 patent: “Low-Magnetic-Field Gallium Arsenide Quantum Hall Resistance Sample and Preparation Thereof.” The invention describes a sample intended to produce the Quantum Hall Resistance effect at a central plateau magnetic field between 7 and 8 T, with a plateau width of at least 0.6 T.
The sample uses a GaAs heterojunction material with seven layers bonded to a GaAs substrate. From bottom to top, these are a GaAs isolation layer, a GaAs/AlGaAs superlattice layer, a high-purity GaAs layer, a two-dimensional electron gas layer, an undoped AlGaAs isolation layer, a Si-doped AlGaAs layer, and a GaAs surface layer.
Career Highlights
Zeng is associated with Beijing Orient Institute of Measurement and Test. The available information identifies his patent work in semiconductor materials and quantum resistance measurement.
Collaborations
Xiaoding Huang and Zhongwei Wang are listed as Zeng’s coworkers. The provided information does not specify their roles in the patent or the extent of their collaboration.
Conclusion
Yiping Zeng’s documented invention focuses on a layered GaAs sample designed to support Quantum Hall Resistance measurements at comparatively lower magnetic fields.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile