The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Sep. 30, 2024
Beijing Orient Institute of Measurement and Test, Beijing, CN;
Xiaoding Huang, Beijing, CN;
Zhongwei Wang, Beijing, CN;
Jianzhen Cai, Beijing, CN;
Yang Wang, Beijing, CN;
Yuqiao Huang, Beijing, CN;
Yiping Zeng, Beijing, CN;
Beijing Orient Institute of Measurement and Test, Beijing, CN;
Abstract
A low-magnetic-field gallium arsenide Quantum Hall Resistance sample can reproduce a Quantum Hall Resistance effect under lower magnetic field conditions, and has a wider plateau width of the quantum resistance sample being equal or greater than 0.6 T, and the magnetic field condition corresponds to the central magnetic field of the plateau being 2 between 7 T and 8 T. The sample includes a GaAs heterojunction material, the GaAs heterojunction material has a seven-layer structure including first to seventh layers sequentially stacked upwards and bonded to a surface of a GaAs substrate. The first layer is a GaAs isolation layer, the second layer is GaAs/AlGaAs superlattice layer, the third layer is high-purity GaAs layer, the fourth layer is a two-dimensional electron gas layer, the fifth layer is an undoped AlGaAs isolation layer, the sixth layer is a Si-doped AlGaAs layer, and the seventh layer is a GaAs surface layer.