This inventor holds 1 USPTO granted patent and 3 published patent applications. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Ying-Ju Wu: Semiconductor Invention in Hsinchu
Introduction
Ying-Ju Wu is an inventor based in Hsinchu, Taiwan. His patent work concerns semiconductor device fabrication and the integration of a metal-insulator-metal capacitor into a passivation layer. He is associated with Taiwan Semiconductor Manufacturing Company Limited.
Latest Patents
Wu is credited with 1 patent, titled “Embedding a Metal-Insulator-Metal Capacitor in a Passivation Layer.” The invention describes forming a passivation layer over an interconnect structure and etching an opening into it. A first conductive layer and an insulator layer are deposited so that each partially fills the opening. A second conductive layer is then deposited to completely fill the opening. Conductive structures are formed to electrically couple to the first and second conductive layers, respectively.
Career Highlights
Wu’s listed patent reflects work on integrating capacitor structures within semiconductor passivation layers. The described process uses layered conductive and insulating materials to form the capacitor within an opening above an interconnect structure.
Collaborations
Wu’s listed coworker is Tzu-Ting Liu. The available information identifies both inventors in connection with the patent.
Conclusion
Ying-Ju Wu’s patent documents a semiconductor fabrication approach for embedding a metal-insulator-metal capacitor in a passivation layer, highlighting his contribution to integrated device design.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile