Ying Jie Huang

Title: Innovations by Ying Jie Huang in Semiconductor Technology

Introduction

Ying Jie Huang is a notable inventor based in Changhua County, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative designs and methods.

Latest Patents

Ying Jie Huang holds a patent for a semiconductor device and method of forming the same. This invention includes an enhancement mode (E-mode) high electron mobility transistor (HEMT). The E-mode HEMT features a substrate with a channel layer disposed on it. A barrier structure is placed on the channel layer, along with a pair of source/drain (S/D) metals located on opposite sides of the barrier structure. Additionally, a gate metal is situated on the barrier structure between the S/D metals. The channel layer contains a two-dimensional electron gas (2DEG) layer near the interface with the barrier structure. Notably, the fluorine ion concentration in the channel layer adjacent to the 2DEG layer is greater than that found away from it. This innovation enhances the performance and efficiency of semiconductor devices.

Career Highlights

Ying Jie Huang is associated with United Microelectronics Corporation, a leading company in the semiconductor industry. His work has contributed to advancements in semiconductor technology, showcasing his expertise and innovative spirit.

Collaborations

Ying Jie Huang has collaborated with talented coworkers, including Huan Chi Ma and Kuan-Ting Lin. Their combined efforts have fostered a creative environment that promotes technological advancements.

Conclusion

Ying Jie Huang's contributions to semiconductor technology through his patent demonstrate his innovative capabilities and commitment to advancing the field. His work continues to influence the development of efficient semiconductor devices.