Ying-Hsuan Li

Title: Innovations of Ying-Hsuan Li in Semiconductor Technology

Introduction

Ying-Hsuan Li is a notable inventor based in Pingtung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in methods that enhance device performance and reliability. His innovative approaches have led to the development of a patented method that addresses critical challenges in gate leakage and threshold voltage control.

Latest Patents

Ying-Hsuan Li holds a patent titled "Method for gate leakage reduction and Vt shift control and complementary metal-oxide-semiconductor device." This invention focuses on a method for reducing gate leakage and controlling the threshold voltage shift. The process involves performing a first ion implantation on both the PMOS and NMOS regions of a substrate to implant fluorine ions, carbon ions, or both. A second ion implantation is then conducted solely on the NMOS region, ensuring that the doping concentrations in the PMOS and NMOS regions differ. This differentiation compensates for side effects caused by varying equivalent oxide thicknesses, effectively avoiding threshold voltage shifts.

Career Highlights

Ying-Hsuan Li is associated with United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to apply his innovative ideas in practical applications, contributing to advancements in semiconductor devices.

Collaborations

Ying-Hsuan Li has collaborated with notable colleagues, including Chien-Liang Lin and Yu-Ren Wang. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and enhances the development of innovative technologies.

Conclusion

Ying-Hsuan Li's contributions to semiconductor technology through his patented methods demonstrate his expertise and commitment to innovation. His work not only addresses current challenges in the field but also paves the way for future advancements in semiconductor devices.