Ying Hsin Lu

Title: Ying Hsin Lu: Semiconductor Device Inventor

Introduction

Ying Hsin Lu is an inventor based in Tainan City, Taiwan. His work focuses on semiconductor device structures and fabrication methods. He is associated with Taiwan Semiconductor Manufacturing Co., Ltd. and is credited with 2 patents.

Latest Patents

Lu’s listed patents address metal gate electrodes and gate structures in semiconductor devices.

- **Structure for Metal Gate Electrode and Method of Fabrication.** This invention describes a transistor with a gate component positioned over its channel. The gate includes a dielectric layer, a first work-function metal layer, a fill-metal layer, and a second work-function metal layer.

- **Gate Structure of Semiconductor Device and Method of Forming Same.** This invention describes forming a fin and a sacrificial gate electrode, then reshaping the electrode. The reshaped structure has portions along the fin’s top surface and sidewall, with widths that narrow in specified directions.

Career Highlights

Lu’s patent work reflects an emphasis on the design and fabrication of semiconductor gate structures. The inventions address electrode composition and geometry, both important aspects of transistor construction.

Collaborations

Lu is associated with Taiwan Semiconductor Manufacturing Co., Ltd. His listed coworker is I-Shan Huang.

Conclusion

Ying Hsin Lu’s two listed patents focus on metal gate electrodes and reshaped gate structures, contributing to innovations in semiconductor device fabrication.