Hsinchu, Taiwan

Yih-Shan Yang

USPTO Granted Patents = 14 

Average Co-Inventor Count = 1.3

ph-index = 2

Forward Citations = 12(Granted Patents)


Company Filing History:


Years Active: 2016-2025

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14 patents (USPTO):Explore Patents

Title: Yih-Shan Yang: Innovator in Memory Device Technology

Introduction

Yih-Shan Yang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of memory devices, holding a total of 14 patents. His work focuses on enhancing the performance and capacity of memory technologies, particularly in the realm of NAND flash memory.

Latest Patents

Among his latest patents is a memory device and detection method for identifying the defeated status of memory cells. This innovative memory device, exemplified by a three-dimensional NAND flash memory circuit, offers high-performance and high-capacity storage solutions. The detection method involves searching status data stored in a page buffer, identifying set status memory cells, and acquiring relevant data. Additionally, he has developed a push-pull output driver and operational amplifier that utilizes a voltage driver circuit for output stages. This circuit includes a level shifter and an output driver, which enhances the efficiency of operational amplifiers and other circuits.

Career Highlights

Yih-Shan Yang has established a successful career at Macronix International Co., Ltd., where he continues to innovate in memory technology. His expertise and contributions have positioned him as a key figure in the industry, driving advancements in memory device performance.

Collaborations

Throughout his career, Yih-Shan has collaborated with notable colleagues, including Shou-Nan Hung and Chun-Hsiung Hung. These partnerships have fostered a collaborative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Yih-Shan Yang's contributions to memory device technology exemplify his commitment to innovation and excellence. His patents and collaborative efforts continue to shape the future of memory solutions, making a lasting impact in the field.

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