This inventor holds 1 USPTO granted patent. Top assignee: Nan Ya Technology Corporation. Active years: 2002.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2002
Title: Yih-Ren Shao: Innovator in Shallow Trench Isolation Technology
Introduction
Yih-Ren Shao is a notable inventor based in Hsien, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the area of shallow trench isolation.
Latest Patents
Yih-Ren Shao holds a patent for a technology titled "Shallow trench isolation having an etching stop layer and method for fabricating same." This innovative method utilizes a shield layer, such as a silicon nitride layer, to serve as an etching stop layer. The etching stop layer is strategically formed at the top position of the shallow trench isolation, enhancing the fabrication process.
Career Highlights
Shao is currently employed at Nan Ya Technology Corporation, where he continues to develop cutting-edge technologies in semiconductor manufacturing. His work has been instrumental in advancing the efficiency and effectiveness of shallow trench isolation techniques.
Collaborations
Throughout his career, Yih-Ren Shao has collaborated with esteemed colleagues, including Chung-Peng Hao and Chung-Lin Huang. These partnerships have fostered innovation and contributed to the success of various projects within the company.
Conclusion
Yih-Ren Shao's contributions to shallow trench isolation technology exemplify his dedication to innovation in the semiconductor industry. His patent and ongoing work at Nan Ya Technology Corporation highlight his role as a key figure in advancing this critical technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile