This inventor holds 1 USPTO granted patent. Top assignee: The University of Texas System. Active years: 2017.
Company Filing History:
Years Active: 2017
Title: Yifan Nie: Innovator in Ionic Control Barrier Technology
Introduction
Yifan Nie is a prominent inventor based in Dallas, TX (US). He has made significant contributions to the field of semiconductor technology, particularly with his innovative work on ionic control barrier devices.
Latest Patents
Yifan Nie holds a patent for the Ionic Barristor. This invention is a Schottky barrier device that features a transition metal dichalcogenide (TMD) layer on a substrate, a graphene layer on the TMD layer, and an electrolyte layer on the TMD layer. The device includes a source gate contact on the electrolyte layer, with a drain contact on the TMD layer and a source contact on the graphene layer. The ionic gating from the source gate contact and electrolyte layer is utilized to adjust the Schottky barrier height, leading to the term 'ionic barristor' for this innovative device.
Career Highlights
Yifan Nie is affiliated with the University of Texas System, where he continues to advance research in semiconductor technologies. His work has garnered attention for its potential applications in various electronic devices.
Collaborations
Yifan has collaborated with notable colleagues, including Kyeongjae Cho and Suklyun Hong, who contribute to the research environment at the University of Texas System.
Conclusion
Yifan Nie's contributions to the field of ionic control barrier technology exemplify the innovative spirit of modern inventors. His work on the Ionic Barristor represents a significant advancement in semiconductor devices, showcasing the potential for future applications in electronics.