The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2017
Filed:
Feb. 04, 2016
Board of Regents, the University of Texas System, Austin, TX (US);
Kyeongjae Cho, Frisco, TX (US);
Yifan Nie, Dallas, TX (US);
Suklyun Hong, Plano, TX (US);
Robert M. Wallace, Garland, TX (US);
BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM, Austin, TX (US);
Abstract
A Schottky barrier device is provided herein that includes a TMD layer on a substrate, a graphene layer on the TMD layer, an electrolyte layer on the TMD layer, and a source gate contact on the electrolyte layer. A drain contact can be provided on the TMD layer and a source contact can be provided on the graphene layer. As ionic gating from the source gate contact and electrolyte layer is used to adjust the Schottky barrier height this Schottky barrier device can be referred to as an ionic control barrier transistor or 'ionic barristor'.