Yibing Wang

Title: Yibing Wang: Innovator in Semiconductor Technology

Introduction

Yibing Wang is a prominent inventor based in Chengdu, China. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to device design and manufacturing.

Latest Patents

One of his latest patents is titled "Termination structure of super-junction power device comprising plurality of runway-shaped rings as the resistive field plate." This invention features a novel polysilicon resistive field plate at the top of a termination region, which optimizes the distribution of charges and limits the expansion of a non-depletion region. The termination structure includes various components such as a first doping type epitaxial layer, a second doping type compensation region, and a gate oxide layer, among others.

Another significant patent is "Semiconductor device and manufacturing method." This patent describes a method for manufacturing a semiconductor device that involves forming a drift region and a compensation region through deep trench etching and filling technology. The invention introduces modulation doping regions that flexibly modify capacitance characteristics, leading to improved dynamic performance.

Career Highlights

Yibing Wang has worked at the University of Electronic Science and Technology of China and the Institute of Electronic and Information Engineering of UESTC in Guangdong. His work in these institutions has allowed him to advance his research and contribute to the field of electronics.

Collaborations

He has collaborated with notable colleagues, including Ming Qiao and Ruidi Wang, who have contributed to his research endeavors.

Conclusion

Yibing Wang's innovative patents and career in semiconductor technology highlight his role as a key figure in advancing electronic device design and manufacturing methods. His contributions continue to influence the field and pave the way for future innovations.