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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12382679 B1

PDFFull Text
Date of Patent:
Aug. 05, 2025

Filed:

Jun. 03, 2022

Semiconductor device and manufacturing method

Applicants:

University of Electronic Science and Technology of China, Chengdu, CN;

Institute of Electronic and Information Engineering of Uestc IN Guangdong, Dongguan, CN;

Inventors:

Ming Qiao, Chengdu, CN;

Ruidi Wang, Chengdu, CN;

Yibing Wang, Chengdu, CN;

Wenyang Bai, Chengdu, CN;

Bo Zhang, Chengdu, CN;

Assignees:

University of Electronic Science and Technology of China, Chengdu, CN;

Institute of Electronic and Information Engineering of UESTC in Guangdong, Dongguan, CN;

Attorney:

Bayramoglu Law Offices LLC

Primary Examiner:

William B Partridge

Assistant Examiner:

Megan undefined Parrish

Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 21/761 (2006.01); H10D 30/01 (2025.01); H10D 30/66 (2025.01); H10D 62/10 (2025.01); H10D 62/17 (2025.01);
U.S. Cl.
CPC ...
H10D 62/111 (2025.01); H01L 21/26513 (2013.01); H01L 21/266 (2013.01); H01L 21/761 (2013.01); H10D 30/0291 (2025.01); H10D 30/66 (2025.01); H10D 62/393 (2025.01);
Abstract

A method for manufacturing a semiconductor device is provided. A drift region and a compensation region are formed through a deep trench etching and a filling technology. A plurality of modulation doping regions are formed at a top of the drift region by an epitaxy and an ion implantation. A modulation region is introduced, wherein the modulation region flexibly modifies capacitance characteristics and achieve improved dynamic characteristics.

Find Patent Forward Citations

Qiao, Ming. (2025). Semiconductor device and manufacturing method (U.S. Patent No. 12382679). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12382679

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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