The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
Jun. 03, 2022
Applicants:
University of Electronic Science and Technology of China, Chengdu, CN;
Institute of Electronic and Information Engineering of Uestc IN Guangdong, Dongguan, CN;
Inventors:
Ming Qiao, Chengdu, CN;
Ruidi Wang, Chengdu, CN;
Yibing Wang, Chengdu, CN;
Wenyang Bai, Chengdu, CN;
Bo Zhang, Chengdu, CN;
Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 21/761 (2006.01); H10D 30/01 (2025.01); H10D 30/66 (2025.01); H10D 62/10 (2025.01); H10D 62/17 (2025.01);
U.S. Cl.
CPC ...
H10D 62/111 (2025.01); H01L 21/26513 (2013.01); H01L 21/266 (2013.01); H01L 21/761 (2013.01); H10D 30/0291 (2025.01); H10D 30/66 (2025.01); H10D 62/393 (2025.01);
Abstract
A method for manufacturing a semiconductor device is provided. A drift region and a compensation region are formed through a deep trench etching and a filling technology. A plurality of modulation doping regions are formed at a top of the drift region by an epitaxy and an ion implantation. A modulation region is introduced, wherein the modulation region flexibly modifies capacitance characteristics and achieve improved dynamic characteristics.