Ruidi Wang

Title: Ruidi Wang: Innovator in Semiconductor Technology

Introduction

Ruidi Wang is a prominent inventor based in Chengdu, China, known for his significant contributions to semiconductor technology. With a total of three patents to his name, Wang has made strides in developing advanced manufacturing methods and devices that enhance the performance of semiconductor components.

Latest Patents

Wang's latest patents include a method for manufacturing a semiconductor device, which involves the formation of a drift region and a compensation region through deep trench etching and filling technology. This innovative approach allows for the creation of modulation doping regions that improve dynamic characteristics by flexibly modifying capacitance. Another notable patent is the split-gate enhanced power MOS device, which features a substrate and an epitaxial layer with a control gate trench. This design incorporates multiple gate electrodes separated by dielectric layers, optimizing the device's performance.

Career Highlights

Throughout his career, Ruidi Wang has worked at esteemed institutions such as the University of Electronic Science and Technology of China and the Institute of Electronic and Information Engineering of UESTC in Guangdong. His work in these organizations has allowed him to collaborate with other experts in the field and contribute to groundbreaking research in semiconductor technology.

Collaborations

Wang has collaborated with notable colleagues, including Ming Qiao and Bo Zhang, further enhancing his research and development efforts in the semiconductor industry.

Conclusion

Ruidi Wang's innovative work in semiconductor technology has led to significant advancements in manufacturing methods and device design. His contributions continue to influence the field and pave the way for future innovations.