Shanghai, China

Yibin Song


Average Co-Inventor Count = 2.4

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2019-2022

Loading Chart...
2 patents (USPTO):Explore Patents

Title: Yibin Song: Innovator in Magnetic Random Access Memory Technology

Introduction

Yibin Song is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of magnetic random access memory (MRAM) technology. With a total of 2 patents, his work focuses on improving the efficiency and design of memory devices.

Latest Patents

Yibin Song's latest patents include a device and method for disturbance-free 3D MRAM fabrication. This innovation features a magnetic random access memory that includes a memory cell with a first fixed layer, a second fixed layer, and one or more free layers positioned between them. The design reduces magnetic interference between memory cells and simplifies the fabrication process, enhancing the integration level. Another notable patent is for a magnetic random access memory and its manufacturing method, which relates to semiconductor techniques. This memory device comprises a word line, a bit line, and a memory unit that includes a fixture layer, a free layer, and an insulation layer. This design offers a simpler structure compared to conventional devices, facilitating easier manufacturing and improving the integrity of the process.

Career Highlights

Yibin Song has worked with leading companies in the semiconductor industry, including Semiconductor Manufacturing International (Shanghai) Corporation and Semiconductor Manufacturing International (Beijing) Corporation. His experience in these organizations has contributed to his expertise in memory technology.

Collaborations

Throughout his career, Yibin has collaborated with notable colleagues such as Zhuofan Chen and Haiyang Zhang. Their teamwork has likely played a role in advancing their shared goals in the field of semiconductor technology.

Conclusion

Yibin Song's innovative work in magnetic random access memory technology showcases his commitment to enhancing memory device design and manufacturing processes. His contributions are significant in the ongoing evolution of semiconductor technology.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…