The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2019

Filed:

Oct. 31, 2017
Applicants:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;

Inventors:

Zhuofan Chen, Shanghai, CN;

Yibin Song, Shanghai, CN;

Haiyang Zhang, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 27/22 (2006.01); H01L 21/822 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/222 (2013.01); H01L 21/8221 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01); H01L 27/0688 (2013.01);
Abstract

A magnetic random access memory and its manufacturing method related to semiconductor techniques. The magnetic random access memory comprises a word line, a bit line, and a memory unit positioned between the word line and the bit line, wherein the memory unit comprises a fixture layer connecting the bit line, a free layer connecting the word line, and an insulation layer positioned between the fixture layer and the free layer. This magnetic random access memory has a simpler design than conventional devices and can be manufactured more easily, which improves the integrity of the manufacturing process.


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