Wuhan, China

Yi Zhao

This inventor holds 1 USPTO granted patent and 6 published patent applications and 1 EPO patent. Top assignee: Yangtze Memory Technologies., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yi Zhao. Retrieved from https://idiyas.com/inventor/yi-zhao-821wx5og

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Yi Zhao - Innovator in Semiconductor Technology

Introduction

Yi Zhao is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of semiconductor technology, particularly in memory devices. His innovative approach has led to the development of a unique fabrication method that enhances the performance and efficiency of memory devices.

Latest Patents

Yi Zhao holds a patent for a memory device and its fabrication method. This semiconductor device fabrication method involves providing a processing wafer that features core and staircase structure (SS) regions. The processing wafer includes a bottom conductor layer, conductor/dielectric tier(s) over the bottom conductor layer, and a channel hole (CH) in the core region that extends approximately vertically through the conductor/dielectric tier(s). The CH consists of a channel layer and a memory film surrounding the channel layer. A protrusion portion of both the channel layer and the memory film extends into the bottom conductor layer. The method further includes patterning the bottom conductor layer to remove a portion in the core region, etching to expose the protrusion portion of the channel layer, performing impurity implantation, and conducting laser activation. This innovative method has the potential to significantly improve memory device performance.

Career Highlights

Yi Zhao is currently employed at Yangtze Memory Technologies, Ltd., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the capabilities of memory devices, making them more efficient and reliable. With a focus on innovation, Yi Zhao has established himself as a key figure in the industry.

Collaborations

Yi Zhao collaborates with talented professionals in his field, including Lina Miao and Liang Xiao. These partnerships foster a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.

Conclusion

Yi Zhao's contributions to semiconductor technology, particularly in memory devices, highlight his innovative spirit and dedication to advancing the field. His patent and ongoing work at Yangtze Memory Technologies, Ltd. demonstrate his commitment to excellence in technology development.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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