Yi-Wei Lien

Title: Yi-Wei Lien: Innovator in Semiconductor Technology

Introduction

Yi-Wei Lien is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of radio frequency (RF) power transistors and III-nitride based semiconductors. With a total of 2 patents, his work has implications for enhancing the performance and efficiency of electronic devices.

Latest Patents

Yi-Wei Lien's latest patents include an innovative RF power transistor. This transistor features a semiconductor heterostructure, a gate electrode, a drain electrode, and a source electrode. The design of the drain electrode incorporates both an ohmic contact and a Schottky contact, which are strategically spaced from the gate electrode. The specifications ensure that the length of the contact is between 2 and 4 micrometers, optimizing the performance of the transistor.

Another notable patent is a method for fabricating III-nitride based semiconductors on partially isolated silicon substrates. This method allows for the semiconductor to be produced without the need for thinning the silicon substrate. The process simplifies production and reduces costs while maintaining the on-state current and enhancing breakdown voltage for large-scale chips.

Career Highlights

Yi-Wei Lien is affiliated with Tsinghua University, where he continues to advance research in semiconductor technologies. His work is characterized by a focus on practical applications that address common challenges in the industry.

Collaborations

He has collaborated with notable colleagues such as Shuo-Hung Hsu and Yu-Syuan Lin, contributing to a dynamic research environment that fosters innovation.

Conclusion

Yi-Wei Lien's contributions to semiconductor technology exemplify the impact of innovative thinking in engineering. His patents not only advance the field but also pave the way for future developments in electronic devices.