The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Dec. 02, 2013
Applicant:
National Tsing Hua University, Hsinchu, TW;
Inventors:
Assignee:
National Tsing Hua University, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01L 21/30604 (2013.01);
Abstract
A semiconductor is fabricated on a silicon (Si) substrate. The semiconductor is III-nitride based. The Si substrate is partially isolated. Etching is directly processed from top on a chip for solving wire-width problem. The Si substrate does not need to be made thin. The chip can be large scaled and be prevented from bowing. Thus, the present invention simplifies producing procedure and reduces production cost. Besides, for a large-scaled chip, the breakdown voltage is enhanced; and, without making the Si substrate thin, the on-state current is remained the same and the heat problem is weakened.