The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2017
Filed:
Apr. 01, 2016
Applicant:
National Tsing Hua University, Hsinchu, TW;
Inventors:
Assignee:
NATIONAL TSING HUA UNIVERSITY, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66462 (2013.01); H01L 29/0619 (2013.01); H01L 29/7786 (2013.01); H01L 29/2003 (2013.01); H01L 29/41725 (2013.01);
Abstract
A radio frequency (RF) power transistor includes a semiconductor heterostructure, a gate electrode, a drain electrode and a source electrode. The drain electrode includes an ohmic contact and a Schottky contact extending from the ohmic contact toward the gate electrode, spaced apart from the gate electrode () by a distance (L), and having a length (L) being not less than 2 μm and not greater than 4 μm. A ratio of the length (L) to a sum of the length (L) and a distance (L) is greater than 0.83 and less than 0.98.