Zhubei, Taiwan

Yi Te Shih

This inventor holds 2 USPTO granted patents. Top assignee: Macronix International Co., Ltd.. Active years: 2009-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yi Te Shih. Retrieved from https://idiyas.com/inventor/yi-te-shih-egepxj6l

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 50.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2009-2010

Loading Chart...
2 patents (USPTO):Explore Patents

Title: Yi Te Shih: Innovator in Memory Technology

Introduction

Yi Te Shih is a notable inventor based in Zhubei, Taiwan. He has made significant contributions to the field of memory technology, holding a total of 2 patents. His work focuses on enhancing the performance and reliability of memory devices.

Latest Patents

One of Yi Te Shih's latest patents is titled "Method and system for preventing noise disturbance in high speed, low power memory." This invention involves a memory device that includes a memory cell and a sense amplifier with a specific sensing interval. The output circuit is connected to the sense amplifier and responds to a clock signal to accept the signal from the sense amplifier. The invention features a first source of timing signals that generates a first timing signal in response to an enable signal, which is asynchronous relative to the clock signal. Additionally, a second source of timing signals generates a second timing signal based on the clock signal. A switch is employed to select one of the first and second timing signals to define pre-charge and sensing intervals for the sense amplifier. This innovative approach ensures that transitions in the clock signal occur outside of the sensing interval, thereby preventing noise disturbances.

Another significant patent by Yi Te Shih is the "Method and apparatus for programming nonvolatile memory." This invention addresses the programming disturb effect by applying a medium voltage, which is between the programming voltage and ground, to a metal bit line among the cells affected by the program disturb effect. This method enhances the reliability of nonvolatile memory programming.

Career Highlights

Yi Te Shih is currently employed at Macronix International Co., Ltd., a company known for its advancements in memory technology. His work at Macronix has allowed him to contribute to cutting-edge innovations in the field.

Collaborations

Throughout his career, Yi Te Shih has collaborated with talented individuals such as Pei Hsun Liao and Ho Hsuan Liu. These collaborations have fostered a creative environment that promotes innovation and technological advancement.

Conclusion

Yi Te Shih is a prominent inventor whose work in memory technology has led to significant advancements in the field. His patents reflect a commitment to improving the performance and reliability of memory devices. His contributions continue to influence the industry and inspire future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…