Company Filing History:
Years Active: 2001-2002
Title: Yi-Shin Chang: Innovator in Semiconductor Technology
Introduction
Yi-Shin Chang is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of multilayer structures and polysilicon layers. With a total of 2 patents to his name, his work has implications for various memory technologies.
Latest Patents
Yi-Shin Chang's latest patents include a method of fabricating an oxide/nitride multilayer structure for integrated circuit (IC) manufacture. This innovative method allows for the creation of dielectric films that can be utilized in the production of E PROM, flash memories, or the dielectric layers of DRAM capacitors. Notably, all films in this process are formed within the same chamber, requiring only one heating and one cooling step to achieve the desired oxide/nitride/oxide or oxide/nitride/oxide/nitride structures.
Another significant patent is the method for forming a hemispherical-grain polysilicon. This process involves initially forming an alpha-silicon layer on a substrate, followed by an increase in temperature within a UHV-CVD chamber. The method enhances throughput and reduces processing time for the polysilicon layer, ultimately increasing its electrical capacity.
Career Highlights
Yi-Shin Chang is currently employed at Mosel Vitelic Corporation, where he continues to advance semiconductor technologies. His expertise in multilayer structures and polysilicon formation has positioned him as a key player in the industry.
Collaborations
Some of his notable coworkers include Ming-Kuan Kao and Yi-Fu Chang, who have collaborated with him on various projects within the semiconductor field.
Conclusion
Yi-Shin Chang's contributions to semiconductor technology through his innovative patents demonstrate his commitment to advancing the industry. His work continues to influence the development of memory technologies and fabrication methods.