The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2001
Filed:
Apr. 07, 1999
Applicant:
Inventors:
Ping-Wei Lin, Chia-I, TW;
Jui-Ping Li, I-Lan Hsian, TW;
Ming-Kuan Kao, Hsin-Chu, TW;
Yi-Shin Chang, Taipei, TW;
Assignee:
Mosel Vitelic Inc., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/120 ; H01L 2/136 ; C03B 2/148 ;
U.S. Cl.
CPC ...
H01L 2/120 ; H01L 2/136 ; C03B 2/148 ;
Abstract
An irradiation process method for forming polysilicon layer is disclosed. The method includes firstly forming an alpha-silicon layer on substrate. Then the temperature of the UHV-CVD chamber is increased and the wafer is sent into the chamber. Gas is then intermittently conducted into the vacuum-chamber apparatus. While increasing the temperature of the vacuum-chamber apparatus, the whole throughput thus increases and the process-time for the polysilicon layer thus decreases. Finally, the electrical capacity thus increases by forming the polysilicon layer.