The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2002
Filed:
May. 05, 1999
Applicant:
Inventors:
Yi-Shin Chang, Taipei, TW;
Ming-Kuan Kao, Hsinchu, TW;
Yi-Fu Chang, TaiNan, TW;
Chien-Hung Chen, Taipei, TW;
Assignee:
Mosel Vitelic Inc., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ; H01L 2/131 ; H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/1336 ; H01L 2/131 ; H01L 2/1469 ;
Abstract
A method of fabricating an oxide/nitride multilayer structure is disclosed. The multilayer structure of dielectric films could be applied for manufacturing E PROM, flash memories, or the dielectric layers of a DRAM capacitor. In accordance with the present invention, all films are formed in the same chamber, and only one heating and one cooling step are needed to form an oxide/nitride/oxide structure or an oxide/nitride/oxide/nitride structure.