Yi-Hsung Wei

Title: Innovations of Yi-Hsung Wei in SRAM Technology

Introduction

Yi-Hsung Wei is a notable inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of SRAM (Static Random-Access Memory) devices. With a total of three patents to his name, Wei's work has advanced the manufacturing methods and structural designs of these essential memory components.

Latest Patents

Yi-Hsung Wei's latest patents include a manufacturing method of an SRAM device. This method involves forming two transistors on a substrate and creating an inner dielectric layer that covers these transistors. The process includes forming contacts in the inner dielectric layer for coupling to the source nodes of the transistors. A metal interconnect structure is then established on the inner dielectric layer, utilizing a portion of an n-th metal layer as a lower metal layer. An opening is created in this structure to expose the lower metal layer, followed by the formation of a capacitor that consists of multiple layers, including a dielectric layer and an upper metal layer.

Another significant patent by Wei describes an SRAM memory device that comprises a substrate, two transistors, a metal interconnect structure, and a capacitor. The capacitor is strategically placed within the metal interconnect structure and is coupled between the two transistors. This design ensures efficient functionality and improved performance of the SRAM device.

Career Highlights

Yi-Hsung Wei is currently employed at Powerchip Semiconductor Manufacturing Corporation, where he continues to innovate in the semiconductor industry. His expertise in SRAM technology has positioned him as a key player in the development of advanced memory solutions.

Collaborations

Throughout his career, Wei has collaborated with esteemed colleagues such as Shou-Zen Chang and Pei-Hsiu Tseng. These partnerships have fostered a collaborative environment that enhances the innovation process within the company.

Conclusion

Yi-Hsung Wei's contributions to SRAM technology through his patents and collaborations highlight his role as a significant inventor in the semiconductor field. His work continues to influence the development of memory devices, showcasing the importance of innovation in technology.