Miaoli, Taiwan

Yi-Hsiu Hsiao

This inventor holds 3 USPTO granted patents and 2 published patent applications. Top assignees: National Taiwan University, Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2022-2025.

USPTO Granted Patents = 3 

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Location History:

  • Miaoli County, TW (2022)
  • Hsinchu, TW (2023)

Company Filing History:


Years Active: 2022-2025

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3 patents (USPTO):Explore Patents

Title: The Innovations of Yi-Hsiu Hsiao: A Pioneer in Semiconductor Technology

Introduction: Yi-Hsiu Hsiao is a notable inventor based in Miaoli County, Taiwan, recognized for his significant contributions to the field of semiconductor devices. With a total of three patents to his name, Hsiao's work is characterized by innovative designs and advanced technological applications.

Latest Patents: Among Yi-Hsiu Hsiao's latest patents is a groundbreaking semiconductor device featuring a doped work function metal layer. This device comprises a substrate with a P-type region, a gate stack, and epitaxy structures. The gate stack, positioned over the P-type region, includes a gate dielectric layer, a bottom work function (WF) metal layer, a top WF metal layer, and a filling metal. The configuration allows for dipoles to form between the top WF metal layer and the bottom WF metal layer, with the dipoles directing from the bottom to the top layer. This innovative structure enhances device performance, providing a significant impact on semiconductor technology.

Career Highlights: Yi-Hsiu Hsiao has made a remarkable impact through his career at prominent institutions. He has been associated with Taiwan Semiconductor Manufacturing Company Limited and National Taiwan University, where he contributed to advancing semiconductor technology through research and development efforts.

Collaborations: Throughout his career, Hsiao has collaborated with several talented individuals, including notable coworkers Chih-Hsiung Huang and Chung-En Tsai. These partnerships have played a vital role in fostering innovation and excellence in their projects.

Conclusion: Yi-Hsiu Hsiao stands out as an influential inventor in the semiconductor field. His latest patents and experience with leading companies reflect his commitment to advancing technology. Through collaborative efforts and innovative designs, Hsiao continues to pave the way for future developments in semiconductor devices, significantly impacting the industry.

Profile summary based on public USPTO records.
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