This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Yi Hsing Yu - Innovator in Semiconductor Technology
Introduction
Yi Hsing Yu is an inventor based in Hsinchu, Taiwan. He is known for his contributions to semiconductor technology, focusing on innovative device structures and manufacturing methods. Although he currently holds no granted patents, his work in the field is noteworthy.
Latest Patent Applications
Yi Hsing Yu has filed several patent applications, including:
1. **SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME** - This application describes a semiconductor device structure that includes a gate electrode layer, a first source/drain region, a conductive contact, and multiple dielectric layers. The invention aims to enhance the performance and reliability of semiconductor devices.
2. **SELECTIVE HARDMASK ON HARDMASK** - This application outlines a method for manufacturing semiconductor devices. It involves forming a patterned hardmask over a target layer and performing plasma fabrication operations to create a protective cap on the hardmask while etching the underlying layer.
Conclusion
Yi Hsing Yu's innovative approaches in semiconductor technology demonstrate his commitment to advancing the field. His latest patent applications reflect his ongoing efforts to develop new methods and structures that could significantly impact semiconductor manufacturing.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile