Yi Hisao

Title: Yi Hisao - Innovator in Semiconductor Technology

Introduction

Yi Hisao is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances performance and efficiency.

Latest Patents

Yi Hisao holds a patent for a semiconductor device that includes a conductive layer, a semiconductor stack, a first contact structure, an intermediate structure, a second contact structure, a first electrode, and a second electrode. The semiconductor stack is disposed on the conductive layer, while the first contact structure is placed on the semiconductor stack. The intermediate structure encloses the first contact structure, and the second contact structure is positioned between the conductive layer and the semiconductor stack. The first electrode is located on the conductive layer and is separated from the semiconductor stack, whereas the second electrode is situated on the intermediate structure. This innovative design aims to improve the functionality and reliability of semiconductor devices.

Career Highlights

Yi Hisao is currently employed at Epistar Corporation, a leading company in the semiconductor industry. His work at Epistar has allowed him to focus on advancing semiconductor technologies and contributing to the company's success. His expertise in this field has made him a valuable asset to the organization.

Collaborations

Yi has collaborated with notable colleagues, including Yung-Fu Chang and Hui-Fang Kao. These partnerships have fostered a creative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Yi Hisao's contributions to semiconductor technology exemplify his dedication to innovation and excellence. His patent and work at Epistar Corporation highlight his role as a key player in advancing the semiconductor industry.