The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2021
Filed:
Nov. 11, 2019
Epistar Corporation, Hsinchu, TW;
Yung-Fu Chang, Hsinchu, TW;
Hui-Fang Kao, Hsinchu, TW;
Yi-Tang Lai, Hsinchu, TW;
Shih-Chang Lee, Hsinchu, TW;
Wen-Luh Liao, Hsinchu, TW;
Mei Chun Liu, Hsinchu, TW;
Yao-Ru Chang, Hsinchu, TW;
Yi Hisao, Hsinchu, TW;
Epistar Corporation, Hsinchu, TW;
Abstract
A semiconductor device includes a conductive layer, a semiconductor stack, a first contact structure, an intermediate structure, a second contact structure, a first electrode and a second electrode. The semiconductor stack is disposed on the conductive layer. The first contact structure is disposed on the semiconductor stack. The intermediate structure encloses the first contact structure. The second contact structure is between the conductive layer and the semiconductor stack. The first electrode is on the conductive layer and separated from the semiconductor stack. The second electrode is on the intermediate structure.