Kang-Shan Town, Taiwan

Yi-Feng Yang

This inventor holds 1 USPTO granted patent. Top assignee: Yageo Corporation. Active years: 2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yi-Feng Yang. Retrieved from https://idiyas.com/inventor/yi-feng-yang-pd8a7bbf

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2006

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1 patent (USPTO):Explore Patents

Title: The Innovations of Yi-Feng Yang

Introduction

Yi-Feng Yang is a notable inventor based in Kang-Shan Town, Taiwan. He has made significant contributions to the field of dielectric materials, particularly through his innovative patent. His work focuses on developing materials that enhance the performance of electronic components.

Latest Patents

Yi-Feng Yang holds a patent for a dielectric material and the method of preparing the same. This invention relates to a novel ZnTiO-based dielectric material, represented by the formula (ZnMg)(TiMnD)O. The material exhibits properties such as ultra-low sintering temperature, high reliability, and high dielectric strength. It is designed for use in low capacitance multilayer ceramic capacitors, offering a high quality factor, low equivalent series resistance (ESR), and high insulation resistance. This patent highlights his expertise in material science and its applications in electronics.

Career Highlights

Throughout his career, Yi-Feng Yang has been associated with Yageo Corporation, a leading company in the electronic components industry. His work at Yageo has allowed him to apply his innovative ideas in practical settings, contributing to advancements in electronic materials.

Collaborations

Yi-Feng Yang has collaborated with notable colleagues, including Wen-Hsi Lee and Che-Yi Su. These collaborations have fostered a creative environment that encourages the development of cutting-edge technologies in the field of dielectric materials.

Conclusion

Yi-Feng Yang's contributions to the field of dielectric materials through his innovative patent demonstrate his commitment to advancing technology in electronics. His work continues to influence the development of high-performance electronic components.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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