The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 21, 2006

Filed:

Jan. 21, 2005
Applicants:

Wen-hsi Lee, Kaohsiung, TW;

Che-yi Su, Kaohsiung, TW;

Yi-feng Yang, Kang-Shan Town, TW;

Inventors:

Wen-Hsi Lee, Kaohsiung, TW;

Che-Yi Su, Kaohsiung, TW;

Yi-Feng Yang, Kang-Shan Town, TW;

Assignee:

Yageo Corporation, Kaohsiung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B 35/462 (2006.01); C04B 35/465 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention relates to a novel ZnTiO-based dielectric material, having the composition represented by the formula (ZnMg)(TiMnD)O, wherein D is an element having a valence of 5 or above, 0≦a≦0.5, c≦b≦0.1, 0<c≦0.1, 1≦d≦1.5, which has properties of ultra low sintering temperature, high reliability, and high dielectric strength, and is capable of being applied to produce low capacitance multilayer ceramic capacitor with high quality factor, low ESR, and high insulation resistance. The present invention also relates to a method of preparing such a novel ZnTiO-based dielectric material.


Find Patent Forward Citations

Loading…