Yi Ding

Title: Yi Ding: Innovator in Low-k Dielectric Technology

Introduction

Yi Ding is a prominent inventor based in Campbell, California. He has made significant contributions to the field of semiconductor technology, particularly in the development of low-k dielectric materials. His innovative work has led to advancements that are crucial for the performance of electronic devices.

Latest Patents

Yi Ding holds a patent for a method of forming a low-k dielectric layer with barrier properties. This patent, titled "Low-k dielectric with self-forming barrier layer," describes a process that involves forming a dielectric layer through Plasma-Enhanced Chemical Vapor Deposition (PECVD). The dielectric layer is doped with one or more elements, including boron, nitrogen, or phosphorus. The method allows for the dopant gas to be coflowed with other reactants during the deposition process, enhancing the properties of the dielectric layer.

Career Highlights

Yi Ding is currently employed at Applied Materials, Inc., a leading company in the semiconductor manufacturing equipment industry. His work at Applied Materials has positioned him as a key player in the development of advanced materials that improve the efficiency and performance of electronic components.

Collaborations

Throughout his career, Yi Ding has collaborated with notable colleagues, including Shaunak Mukherjee and Bo Xie. These collaborations have fostered an environment of innovation and have contributed to the success of various projects within the company.

Conclusion

Yi Ding's contributions to the field of low-k dielectric technology exemplify his commitment to innovation in semiconductor materials. His patent and work at Applied Materials, Inc. highlight his role as a significant inventor in the industry.