The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2022
Filed:
Jun. 08, 2020
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Yi Ding, Campbell, CA (US);
Shaunak Mukherjee, San Jose, CA (US);
Bo Xie, San Jose, CA (US);
Kang Sub Yim, Palo Alto, CA (US);
Deenesh Padhi, Sunnyvale, CA (US);
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/3215 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76829 (2013.01); H01L 21/0234 (2013.01); H01L 21/02274 (2013.01); H01L 21/3215 (2013.01); H01L 21/76826 (2013.01);
Abstract
A method of forming a low-k dielectric layer with barrier properties is disclosed. The method comprises forming a dielectric layer by PECVD which is doped with one or more of boron, nitrogen or phosphorous. The dopant gas of some embodiments may be coflowed with the other reactants during deposition.