Hsinchu, Taiwan

Yi-Chung Lien


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2009

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1 patent (USPTO):Explore Patents

Title: Yi-Chung Lien: Innovator in Semiconductor Technology

Introduction

Yi-Chung Lien is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in methods for forming structures with nanometer line-widths. His innovative approach has implications for the advancement of electronic devices.

Latest Patents

Yi-Chung Lien holds a patent titled "Method for forming a semiconductor structure having nanometer line-width." This patent describes a method for creating semiconductor structures with deep sub-micron or nano scale line-widths. The process involves forming multiple photoresist layers on a substrate, followed by precise patterning and anisotropic etching to achieve the desired structure. The final steps include metal evaporation and lift-off processes, resulting in a 1 patent that enhances the fabrication of nano scale metal gates.

Career Highlights

Yi-Chung Lien is affiliated with National Yang Ming Chiao Tung University, where he continues to engage in research and development in semiconductor technologies. His work is recognized for its potential to improve the performance and efficiency of electronic components.

Collaborations

He has collaborated with notable colleagues such as Szu-Hung Chen and Yi Chang, contributing to various projects in the semiconductor field. Their combined expertise fosters innovation and advances research in this critical area of technology.

Conclusion

Yi-Chung Lien's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the field. His work not only enhances the understanding of semiconductor structures but also paves the way for future developments in electronic devices.

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