This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: United Microelectronics Corp.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Yi-Ching Wang and His Magnetic Memory Device Patent.
Introduction
Yi-Ching Wang is an inventor based in Taichung City, Taiwan. His patent work includes a magnetic memory device designed around a magnetic tunneling junction (MTJ) stack and a layered capping structure. Wang is associated with United Microelectronics Corporation.
Latest Patents
Wang is credited with 1 patent. His patent, “Magnetic Memory Device,” describes an MTJ stack comprising a reference layer, a tunneling barrier layer above it, and a free layer above the barrier. A capping layer sits on the MTJ stack and includes a metal underlayer in direct contact with the free layer, an oxide capping layer above the underlayer, and a metal protection layer above the oxide. The design specifies how these layers are arranged within the memory device.
Career Highlights
Wang’s listed patent activity centers on magnetic memory technology. The patent’s layered structure combines the MTJ stack with a capping arrangement that includes metal and oxide components.
Collaborations
Wang is identified as a coworker of Kuan-Hsiang Chen. Both are associated with United Microelectronics Corporation.
Conclusion
Yi-Ching Wang’s patent record highlights his contribution to magnetic memory device technology through a design that specifies an MTJ stack and a multilayer capping structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile