Company Filing History:
Years Active: 2015-2017
Title: Innovations by Yew Tuck Chow in Semiconductor Technology
Introduction
Yew Tuck Chow is a notable inventor based in Dresden, Germany, recognized for his contributions to semiconductor technology. He holds two patents that focus on advanced methods for forming field effect transistors (FETs) and epitaxial channel formation.
Latest Patents
One of his latest patents is titled "Epitaxial channel formation methods and structures." This patent describes a method for forming FETs in a multiple wafers per batch epi-reactor. The process involves providing substrates with a semiconductor region that has a flat outer surface, modifying this surface to create a convex-outward curve, and forming an epitaxial semiconductor layer on this curved surface. This innovative approach results in FETs with more uniform properties, significantly increasing manufacturing yield and reducing costs.
Another significant patent is the "Horizontal epitaxy furnace for channel SiGe formation." This invention provides a method and apparatus for recessing a channel region of the PFET and epitaxially growing channel SiGe in the recessed region within a horizontally oriented processing furnace. The method includes forming n-channel and p-channel regions on the wafer, placing the wafers in a vertically oriented position inside the furnace, and epitaxially growing cSiGe without defects in the recessed p-channel regions.
Career Highlights
Yew Tuck Chow is currently employed at GlobalFoundries Inc., a leading