Notre Dame, IN, United States of America

Yeqing Lu


Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 13(Granted Patents)


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Yeqing Lu: Innovator in Low Voltage Tunnel Field-Effect Transistors

Introduction

Yeqing Lu is a prominent inventor based in Notre Dame, Indiana. He has made significant contributions to the field of semiconductor technology, particularly through his innovative work on low voltage tunnel field-effect transistors (TFETs). His research and inventions have the potential to advance electronic devices by improving their efficiency and performance.

Latest Patents

Yeqing Lu holds a patent for a low voltage tunnel field-effect transistor and the method of making it. This invention includes a p-n tunnel junction, a gate-dielectric, a gate, a source-contact, and a drain-contact. The p-n tunnel junction features a depletion region that interfaces a source-layer and a drain-layer. The internal electric field of the depletion region plays a crucial role in the operation of the transistor, allowing for enhanced performance in low voltage applications.

Career Highlights

Throughout his career, Yeqing Lu has worked with esteemed institutions, including the University of Notre Dame and IBM. His experience in these organizations has allowed him to collaborate with leading experts in the field and contribute to groundbreaking research in semiconductor technology.

Collaborations

Yeqing Lu has collaborated with notable colleagues such as Alan C. Seabaugh and Patrick Fay. These partnerships have fostered an environment of innovation and have led to advancements in the understanding and application of tunnel field-effect transistors.

Conclusion

Yeqing Lu's contributions to the field of semiconductor technology, particularly through his patent on low voltage tunnel field-effect transistors, highlight his role as an influential inventor. His work continues to inspire advancements in electronic devices and their efficiency.

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